Title :
A 54 to 62.8GHz PA with 95.2mW/mm2 output power density by 4×4 distributed in-phase power combining in 65nm CMOS
Author :
Wei Fei ; Hao Yu ; Yuan Liang ; Wei Meng Lim
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
To combine large number of CMOS power transistors within compact area, a 2D distributed in-phase power combiner is proposed with use of metamaterial-based zero-phase-shifter. One 54 to 62.8GHz PA has been demonstrated in 65nm CMOS with a 4×4 distributed power combining of 16 transistors in compact area of 0.48mm2. Measured results show 16.6dBm output power (OP1dB), 11.3% peak PAE, 95.2mW/mm2 output power density (OP1dB/Area) and 8.8GHz bandwidth.
Keywords :
CMOS analogue integrated circuits; microwave metamaterials; millimetre wave integrated circuits; millimetre wave power amplifiers; power combiners; power transistors; 2D distributed in-phase power combiner; CMOS power transistors; PAE; bandwidth 8.8 GHz; frequency 54 GHz to 62.8 GHz; metamaterial-based zero-phase-shifter; power density; size 65 nm; Area measurement; CMOS integrated circuits; Educational institutions; Gain measurement; Logic gates; Topology; Transistors; 60GHz; CRLH T-line; metamaterial; power amplifiers; power combining;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848274
