Microwave and millimeter-wave flexible electronics

Author

Sharifi, H. ; Shinohara, K. ; Wonill Ha ; Jongchan Kang ; Montes, M. ; McGuire, C. ; May, John ; Kazemi, Hamed

Author_Institution

HRL Labs., LLC, Malibu, CA, USA

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

3

Abstract

A novel method to fabricate substrate-less flexible and printable electronics for microwave and millimeter-wave applications is presented. InGaAs MHEMT technology is utilized in this work to demonstrate feasibility of the flexible electronics with bulk limited performance at microwave frequencies for the first time. The fabrication process and measurement results are discussed in detail.

Keywords

III-V semiconductors; flexible electronics; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; InGaAs; MHEMT technology; fabrication process; microwave flexible electronics; millimeter-wave flexible electronics; printable electronics; substrate-less flexible electronics; Frequency measurement; Microwave FET integrated circuits; Millimeter wave measurements; Millimeter wave transistors; Performance evaluation; mHEMTs; Flexible/printable electronics; InGaAs MHEMT transistors; microwave and millimeter-wave (mmW);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848275

Filename

6848275