DocumentCode
1709762
Title
Microwave passive power limiters with MESFETs
Author
Drozdovski, Nikolai V.
Author_Institution
Special Res. Bur., MPEI, Moscow, Russia
Volume
2
fYear
1997
Firstpage
409
Abstract
This paper describes design, fabrication and test of various microwave passive power limiters based on GaAs MESFETs. Transistors are used as devices under DC voltage control as well as self-controlled devices. Different limiters and their characteristics are compared
Keywords
III-V semiconductors; MESFET integrated circuits; field effect MMIC; gallium arsenide; hybrid integrated circuits; integrated circuit design; microwave limiters; DC voltage control; GaAs; MESFETs; MMIC; amplifier protection; hybrid ICs; microwave passive power limiters; self-controlled devices; Detectors; Gallium arsenide; Impedance; MESFETs; Microwave devices; Radio frequency; Schottky barriers; Schottky diodes; Solid state circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Optoelectronics Conference, 1997. Linking to the Next Century. Proceedings., 1997 SBMO/IEEE MTT-S International
Conference_Location
Natal
Print_ISBN
0-7803-4165-1
Type
conf
DOI
10.1109/SBMOMO.1997.648785
Filename
648785
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