DocumentCode :
170989
Title :
Digital doherty transmitter with envelope ΔΣ modulated class-D GaN power amplifier for 800 MHz band
Author :
Motoi, K. ; Wentzel, A. ; Tanio, M. ; Hori, Satoshi ; Hayakawa, Mana ; Heinrich, Wolfgang ; Kunihiro, K.
Author_Institution :
NEC Corp., Kawasaki, Japan
fYear :
2014
fDate :
1-6 June 2014
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents a novel transmitter (Tx) architecture combining voltage-mode class-D power amplifiers (PAs) with an efficient 1-bit envelope delta-sigma modulation scheme for the 800 MHz band. By digitally processing the input 1-bit codes, the proposed Tx operates as a digital Doherty Tx. The proposed Tx architecture is realized with a GaN H-bridge class-D PA module and CMOS modulator ICs and delivers a CW power of 35.9 dBm at 860 MHz with a final-stage drain efficiency of 75.6% at the saturation point. The drain efficiency at 6-dB BO is still 73.4% which corresponds to an improvement of 23.9 points compared to balanced operation. Using a CDMA signal of 1-MHz bandwidth and 6.5-dB peak-to-average power ratio, the digital Doherty Tx achieves an average output power of 28.6 dBm with a drain efficiency of 56.5%.
Keywords :
CMOS analogue integrated circuits; III-V semiconductors; UHF power amplifiers; code division multiple access; delta-sigma modulation; gallium compounds; modulators; wide band gap semiconductors; 1-bit envelope delta-sigma modulation scheme; CDMA signal; CMOS modulator IC; CW power; GaN; digital Doherty transmitter; efficiency 56.5 percent; efficiency 75.6 percent; envelope ΔΣ modulated class-D gallium nitride power amplifier; final-stage drain efficiency; frequency 800 MHz; frequency 860 MHz; gallium nitride H-bridge class-D PA module; peak-to-average power ratio; saturation point; voltage-mode class-D PA; CMOS integrated circuits; Gallium nitride; Indexes; MMICs; Switches; CMOS; Class-D; Doherty power amplifier; GaN; H-Bridge; MMIC; delta-sigma modulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/MWSYM.2014.6848280
Filename :
6848280
Link To Document :
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