2-D model of a large area, inductively coupled, rectangular plasma source for CVD

Summary form only given. A novel design for an inductively coupled, rectangular plasma source is described. The design encompasses several key issues of large area thin film growth by CVD: structural integrity; electrostatic screening; substrate temperature control; and maximal growth surface. A test reactor has been utilized to grow diamond films over/spl sim/1800 cm/sup 2/ at 13 MHz and /spl sim/1 Torr pressure with 45 kW coupled power. The design is readily scalable to larger areas. To analyze the axial plasma uniformity, a 2-D simulation model is presented. The electromagnetic coupling, non-equilibrium plasma chemistry, and multi-species diffusion are self-consistently treated. In this 2-D approach, the slotted Faraday screen behaves as a diamagnetic medium in transmitting the magnetic field. Results are compared with experimental data for the hydrogen plasma extent, electron, and gas temperatures. Neutral gas thermal conduction and hydrogen recombination dominate the energy deposition to the wall, and in turn govern the plasma length. A tradeoff between quality and growth area is predicted for the reactor as the pressure is decreased.