• DocumentCode
    171028
  • Title

    VSWR-protected 90 W L-band AlGaN/GaN power amplifier

  • Author

    van Heijningen, M. ; van der Bent, Gijs ; van der Houwen, E. ; Chowdhary, Amitabh ; van Vliet, Frank E.

  • Author_Institution
    TNO, The Hague, Netherlands
  • fYear
    2014
  • fDate
    1-6 June 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Solid-state power amplifiers need protection against reflected power at the output caused by load mismatch. The standard method for protection is to include a ferrite-based isolator at the output. The isolator will redirect all reflected power to a dissipating load resistor and will ensure that the output of the amplifier always sees a 50 Ω load. Disadvantage of such isolator is the large size, weight and limited possibility for integration and miniaturization. In this work a protection circuit is presented that can replace the isolator and still offer full protection against any power reflection at the output of the amplifier. This protection circuit is based on measurement of the reflected power and a feedback loop to adjust the gain of a driver-stage, also known as fold-back protection. The driver-stage and output stage are implemented in AlGaN/GaN MMIC and power-bar technology. This protection circuit has been demonstrated on a 2-stage, 90 W L-band power amplifier, intended to be used in satellite payloads for various space applications.
  • Keywords
    III-V semiconductors; MMIC power amplifiers; aluminium compounds; ferrite isolators; gallium compounds; resistors; wide band gap semiconductors; AlGaN-GaN; MMIC; VSWR-protected L-band power amplifier; dissipating load resistor; driver-stage; feedback loop; ferrite-based isolator; fold-back protection; load mismatch; power 90 W; power reflection; power-bar technology; protection circuit; reflected power; resistance 50 ohm; satellite payloads; solid-state power amplifiers; space applications; Abstracts; Couplers; Europe; Gallium nitride; Logic gates; Temperature measurement; Transistors; High power amplifiers; gallium nitride; protection;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium (IMS), 2014 IEEE MTT-S International
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/MWSYM.2014.6848302
  • Filename
    6848302