A new tunable RF front-end circuit for advanced 4G handsets

Author

Obiya, Hidenori ; Wada, Tomotaka ; Hayafuji, Hisao ; Ogami, Takashi ; Tani, Motoaki ; Koshino, Masayoshi ; Kawashima, Mitsumasa ; Nakajima, Naoki

Author_Institution

Murata Manuf. Co., Ltd., Nagaokakyo, Japan

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

3

Abstract

A large number of frequency bands have been included in mobile phone handsets and in their RF front end circuit, RF paths have been increasing and the configuration has been becoming a complex more and more. A new tunable RF front-end circuit for single RF chain architecture is proposed in this paper. A tunable duplexer composed of wideband circulator and SAW based tunable filters for TX and RX, and a tunable low RX noise power amplifier have been developed. RX band noise level in FDD system is studied. Those devices are fabricated for the operation in the low frequency band of 669-960MHz which fractional bandwidth is 31.5%. Experimental results in Band 5 and Band13 show 40dB isolation of the tunable duplexer and 10dB noise level improvement of the tunable low RX noise PA, which achieve target value of 50dB suppression of RX band noise. This results show promising possibility of simple RF front-end of future mobile handsets.

Keywords

4G mobile communication; circuit tuning; circulators; frequency division multiplexing; mobile handsets; power amplifiers; surface acoustic wave filters; 4G handsets; FDD system; SAW based tunable filters; frequency 669 MHz to 960 MHz; mobile phone handsets; power amplifier; tunable RF front-end circuit; tunable duplexer; wideband circulator; Attenuation; Noise; Radio frequency; Surface acoustic waves; Circulator; RF front-end; Tunable duplexer; Tunable low Rx noise PA;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848317

Filename

6848317