Flip chip assembly for sub-millimeter wave amplifier MMIC on polyimide substrate

Author

Kawano, Yoshihiro ; Matsumura, Hiroshi ; Shiba, S. ; Sato, Mitsuhisa ; Suzuki, Takumi ; Nakasha, Yasuhiro ; Takahashi, Tatsuro ; Makiyama, Kozo ; Hara, Naoya

Author_Institution

FUJITSU Ltd., Atsugi, Japan

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

4

Abstract

The sub-millimeter wave amplifier MMIC with flip-chip mounting on polyimide substrate has been realized. The thickness of the substrate and the pitch of GND vias are designed to suppress the air radiation from the slot pattern in the substrate. The test results of the micro-strip line formed on the polyimide substrate shows that the design is applicable to the assembly operated up to 320 GHz. The InP HEMT amplifier MMIC with the assembling technique achieved the operation in 240-260 GHz frequency band with the gain of 20 dB.

Keywords

HEMT integrated circuits; field effect MIMIC; flip-chip devices; microstrip lines; millimetre wave amplifiers; HEMT amplifier MMIC; InP; air radiation suppression; flip chip assembly; frequency 240 GHz to 260 GHz; gain 20 dB; microstrip line; polyimide substrate; submillimeter wave amplifier MMIC; Atomic clocks; Erbium; MMICs; Through-silicon vias; Transducers; mHEMTs; HEMT; InP; flip chip; sub-millimeter;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848323

Filename

6848323