A high gain, W-band SiGe LNA with sub-4.0 dB noise figure

Author

Song, Peter ; Ulusoy, A. Cagri ; Schmid, Robert L. ; Cressler, John D.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

3

Abstract

This paper presents a W-band LNA implemented in a 90 nm SiGe BiCMOS technology. The LNA achieves a maximum gain of 34 dB and a minimum NF of 3.5 dB at 80 GHz with greater than 25 dB gain and less than 4.5 dB NF over the full W-band. Input and output return losses are greater than 10 dB from 78-149 GHz. The circuit nominally operates from a 1.2 V supply while consuming 15.6 mW of DC power. Due to the low DC resistance presented to the base, the LNA can be operated above BV_CEO for an IP_1dB of -21 dBm and a P_SAT as high as +8.5 dBm. To the authors´ best knowledge, this work demonstrates the lowest NF achieved at W-band by an LNA in any silicon-based technology to date.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; bipolar MIMIC; elemental semiconductors; low noise amplifiers; millimetre wave amplifiers; silicon; DC power; Si; SiGe; SiGe BiCMOS technology; W-band SiGe LNA; frequency 78 GHz to 149 GHz; low DC resistance; noise figure 4.0 dB; power 15.6 mW; silicon-based technology; size 90 nm; voltage 1.2 V; CMOS integrated circuits; Educational institutions; Noise measurement; Polyimides; Resistance; Semiconductor device measurement; Silicon germanium; SiGe; W-band; low-noise amplifier; millimeter wave integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848358

Filename

6848358