DocumentCode
1711388
Title
A study of the effects of microwave electromagnetic radiation on dynamic random access memory operation
Author
Bohorquez, Jose L. ; Kenneth, O.
Author_Institution
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Volume
3
fYear
2004
Firstpage
815
Abstract
The effects of microwave electromagnetic (EM) radiation on dynamic random access memory (DRAM) chips are examined. A clear correlation between EM radiation and an increase in the bit error rate is shown through experimentation under different stress conditions. However, for the power level of ∼100 mW at the operating frequency of 24 GHz proposed for wireless interconnection using an external antenna, the EMI on DRAM operation is negligible.
Keywords
DRAM chips; error statistics; radiofrequency interference; 15 to 26.5 GHz; DRAM chips; bit error rate; dynamic random access memory; inter-chip wireless interconnects; intra-chip wireless interconnects; microwave EMI; microwave electromagnetic radiation; microwave radiation; Antenna measurements; DRAM chips; Electromagnetic radiation; Integrated circuit interconnections; Lenses; Optical amplifiers; Random access memory; Semiconductor device measurement; Stimulated emission; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Compatibility, 2004. EMC 2004. 2004 InternationalSymposium on
Print_ISBN
0-7803-8443-1
Type
conf
DOI
10.1109/ISEMC.2004.1349927
Filename
1349927
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