Title :
Low-rate reactive and non-reactive low pressure plasma spraying
Author :
Crawford, W.S. ; Hamatani, H. ; Cappelli, M.A. ; Prinz, F.B.
Author_Institution :
Dept. of Mech. Eng., Stanford Univ., CA, USA
Abstract :
Summary form only given. A low pressure plasma spray (LPPS) process has been developed to operate at 3-4 kW and to deposit metals or ceramic compounds at rates of 0.1-10 g/min, with a coating spot diameter of 1-1.5 cm. The two novel features of this facility are the low power and deposition rate, 10 to 100 times below those of conventional plasma spray processes, and the capacity for reactive plasma spraying. These spray parameters lend themselves to applications in mesoscale (dimensions on order 0.1-1 mm) devices, including substrates for microelectronics. Low-rate spraying may facilitate the construction of mesoscale parts in a layered technique similar to VLSI fabrication. Traditional VLSI fabrication processes are ill-suited to build parts with thickness on the millimeter scale.
Keywords :
integrated circuits; mesoscopic systems; particle size; plasma CVD; plasma arc spraying; plasma density; plasma pressure; plasma temperature; 1 to 1.5 cm; 3 to 4 kW; Cu; VLSI fabrication processes; arc power; ceramic compounds deposition; coating spot diameter; cooled substrate; deposition rate; layered technique; low-rate nonreactive low pressure plasma spraying; low-rate reactive low pressure plasma spraying; mesoscale devices; metals deposition; microelectronics; particle size; plasma spray processes; plasma temperature; reactive plasma spraying; solidification; spray parameters; substrate temperature; Plasma applications; Plasma chemistry; Plasma density; Plasma materials processing; Plasma properties; Plasma sources; Plasma temperature; Powders; Substrates; Thermal spraying;
Conference_Titel :
Plasma Science, 1999. ICOPS '99. IEEE Conference Record - Abstracts. 1999 IEEE International Conference on
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5224-6
DOI :
10.1109/PLASMA.1999.829475
