Title :
A microwave high-power GaN transistor with highly-integrated active digital switch-mode driver circuit
Author :
Maroldt, S. ; Bruckner, P. ; Quay, Ruediger ; Ambacher, Oliver
Author_Institution :
IAF, Fraunhofer Inst. for Appl. Solid-State Phys., Freiburg, Germany
Abstract :
An inverter-based digital switch-mode driver circuit, highly-integrated with a GaN power transistor is presented. The layout is fully scalable in output power and therefore suitable for amplifiers with power levels of higher than 10 W. The circuit enables a switch-mode operation from DC to 3 GHz. A consistent analysis of digital switching measurements and active harmonic load-pull results is performed. Measurements at 2 GHz and 30 V yield a drain efficiency of 82 % and 6 W of output power, while a gain up to 35 dB and more than 76 % overall circuit efficiency were achieved.
Keywords :
III-V semiconductors; UHF power amplifiers; driver circuits; gallium compounds; invertors; microwave power transistors; switched mode power supplies; wide band gap semiconductors; GaN; GaN power transistor; active harmonic load-pull results; digital switching measurements; frequency 2 GHz; integrated active digital switch-mode driver circuit; inverter-based digital switch-mode driver circuit; microwave high-power GaN transistor; power amplifiers; switch-mode operation; voltage 30 V; Gallium nitride; Indexes; Switches; Transistors; GaN; HEMT; MMIC; digital; driver circuit; inverter; switch mode power amplifier;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848393
