Title :
On the oxide thickness extraction in deep-submicron technologies
Author :
Vincent, E. ; Ghibaudo, G. ; Morin, G. ; Papadas, C.
Author_Institution :
SGS-Thomson Microelectron., Crolles, France
Abstract :
Thickness measurement of ultrathin oxides is more and more difficult due to the oxide thickness scale down following the supply voltage decrease in deep-submicron technologies. This paper discusses the drawbacks of the already existing extraction methods and proposes an original approach which has various advantages. This extraction procedure, based on the plot 1/C vs 1/(VG-VFB) obtained by classical C-V measurements, can be easily implemented and provides more accurate oxide thickness results
Keywords :
MOS capacitors; insulating thin films; silicon compounds; thickness measurement; SiO2; capacitance-voltage characteristics; deep-submicron technology; parameter extraction; thickness measurement; ultrathin oxide; Atomic force microscopy; Atomic layer deposition; Capacitance measurement; Capacitance-voltage characteristics; Electric variables measurement; Optical refraction; Optical sensors; Permittivity measurement; Thickness measurement; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-3243-1
DOI :
10.1109/ICMTS.1997.589349
