Comparison of hot cathode and inductively coupled discharges for application in plasma immersed ion implantation and deposition

Author

Kim, G.H. ; Nikiforov, S.A. ; Kan, Y. ; Cho, C.H. ; Choi, Y.W. ; Lee, H.S. ; Lim, G.H.

Author_Institution

Korea Electrotechnol. Res. Inst., Changwon, South Korea

fYear

1999

Firstpage

206

Abstract

Summary form only given. Comparative analysis of plasma parameters and performance for hot cathode DC and inductively coupled 13.56 MHz RF discharges has been carried out. Both discharges were sustained in the same 18-liter cylindrical processing chamber of the self developed 30 kV experimental PIII&D facility. High emission impregnated cathodes had been used in case of DC discharge. Inductive coupling for RF discharge had been provided using a internal two-half-turn antenna, coated with Al/sub 2/O/sub 3/. Different operating modes were tested including in situ sputter deposition with simultaneous implantation. Effects of degradation of cathode emission due to coating and contamination of deposited films with cathode impregnated materials and antenna coating have been analyzed. Results are being used in the design of a 120 kV, 1 m/sup 3/ PIII&D facility which is under development now.

Keywords

antennas in plasma; high-frequency discharges; ion implantation; plasma materials processing; plasma properties; sputter deposition; 120 kV; 13.56 MHz; 30 kV; RF discharges; antenna coating; cathode emission; cylindrical processing chamber; high emission impregnated cathodes; hot cathode DC discharge; in situ sputter deposition; inductively coupled discharges; internal two-half-turn antenna; operating modes; plasma immersed ion deposition; plasma immersed ion implantation; plasma parameters; simultaneous implantation; Cathodes; Ion implantation; Plasma applications; Plasma density; Plasma immersion ion implantation; Plasma materials processing; Plasma measurements; Plasma properties; Plasma sheaths; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 1999. ICOPS '99. IEEE Conference Record - Abstracts. 1999 IEEE International Conference on

Conference_Location

Monterey, CA, USA

ISSN

0730-9244

Print_ISBN

0-7803-5224-6

Type

conf

DOI

10.1109/PLASMA.1999.829498

Filename

829498