An 8.5–10.0 GHz 310 W GaN HEMT for radar applications

Author

Kikuchi, Kazuro ; Nishihara, Masato ; Yamamoto, Hiroshi ; Yamamoto, Takayuki ; Mizuno, Seiya ; Yamaki, Fumikazu ; Sano, Shumpei

Author_Institution

Yamanashi Plant, Sumitomo Electr. Device Innovations, Inc., Yamanashi, Japan

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

4

Abstract

A high-output power and broadband GaN high electron mobility transistor (HEMT) has been developed for X-band applications. The device consists of 2-dice of 14.4-mm gate periphery together with input and output 2-stage impedance transformers. The device exhibited saturated output power of 310 W with power gain of 10.0 dB over the wide frequency range of 8.5-10.0 GHz, operating at 65 V drain voltage under pulsed condition. In addition, the highest saturated output power reached 333 W with power gain of 10.2 dB at 9.0 GHz. This is the highest output power GaN HEMT ever reported for X-band.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; impedance convertors; microwave field effect transistors; wide band gap semiconductors; GaN; HEMT; X-band application; frequency 8.5 GHz to 10.0 GHz; gain 10.0 dB; gain 10.2 dB; gate periphery; high-output power broadband high electron mobility transistor; input 2-stage impedance transformer; output 2-stage impedance transformer; power 310 W; power 333 W; radar application; size 14.4 mm; voltage 65 V; Breakdown voltage; Electrodes; Epitaxial growth; Gallium nitride; HEMTs; Logic gates; Radar; Gallium nitride; HEMTs; X-band; power amplifiers; radar applications;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848404

Filename

6848404