• DocumentCode
    1712167
  • Title

    Electron beam ablated plasma plumes and deposited thin films of fused silica

  • Author

    Kovaleski, Scott D. ; Gilgenbach, Ronald M. ; Ang, L.K. ; Lau, Y.Y.

  • Author_Institution
    Dept. of Nucl. Eng. & Radiol. Sci., Michigan Univ., Ann Arbor, MI, USA
  • fYear
    1999
  • Firstpage
    207
  • Abstract
    Summary form only given. Fused silica has been ablated by a channelspark electron beam and deposited as a thin film. The channelspark is a high current, low accelerating voltage electron beam device developed at KFK. The channelspark has an e-beam current of 1.5 kA, accelerating voltage of 15-20 kV, and requires a background gas full of 15 to 20 mTorr of either Ar or N/sub 2/. Optical emission spectroscopy reveals the presence of Si I, Si II and Si III in the ablation plume. The optical emission of these constituents is seen for up to 4 /spl mu/s. Dye Laser Resonance Absorption Photography (DLRAP) has revealed expansion velocities of the channelspark ablation plumes ranging from 0.4 to 1.4 cm//spl mu/s. This expansion velocity is dependent both on choice of background gas and gas fill pressure. Resonant Ultra-Violet Interferometry (RWI) has also been performed on the fused silica ablation plume to determine line integrated neutral Si densities. Thin films of fused silica ablated by the channelspark have been deposited on substrates. These films are composed predominantly of particulate with diameters of 100´s of nm to /spl mu/m´s.
  • Keywords
    electron beam effects; plasma deposited coatings; plasma diagnostics; plasma-wall interactions; silicon compounds; thin films; 1.5 kA; 15 to 20 kV; 15 to 20 mtorr; 4 mus; Ar; KFK; N/sub 2/; Si I; Si II; Si III; SiO/sub 2/; ablation plume; accelerating voltage; background gas; channelspark electron beam; deposited thin films; dye laser resonance absorption photography; e-beam current; electron beam ablated plasma plumes; expansion velocities; fused silica; fused silica ablation plume; gas fill pressure; high current low accelerating voltage electron beam device; line integrated neutral Si densities; optical emission; particulate diameters; resonant UV interferometry; thin films; Acceleration; Electron beams; Optical films; Optical interferometry; Plasma accelerators; Plasma devices; Resonance; Silicon compounds; Sputtering; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 1999. ICOPS '99. IEEE Conference Record - Abstracts. 1999 IEEE International Conference on
  • Conference_Location
    Monterey, CA, USA
  • ISSN
    0730-9244
  • Print_ISBN
    0-7803-5224-6
  • Type

    conf

  • DOI
    10.1109/PLASMA.1999.829501
  • Filename
    829501