• DocumentCode
    1712251
  • Title

    Improved method for the extraction of oxide charge density and centroid from the current-voltage characteristic shifts in a MOS structure after uniform gate stress

  • Author

    Kies, R. ; Ghibaudo, G. ; Pananakakis, G. ; Papadas, C.

  • Author_Institution
    CNRS, Grenoble, France
  • fYear
    1997
  • Firstpage
    111
  • Lastpage
    115
  • Abstract
    A new method for the extraction of the oxide charge density and distribution centroid based on an improved DiMaria approach including the tunnel transparency modification due to the charge build up has been developed. The comparison with the conventional DiMaria procedure confirms the physical consistency of the new approach and enables a 20-30% improvement in the oxide charge density assessment for dielectrics as thin as 5-9 nm
  • Keywords
    MIS devices; MIS structures; DiMaria method; MOS structure; charge distribution centroid; current-voltage characteristics; dielectric thin film; gate stress; oxide charge density; tunnel transparency; Cathodes; Current-voltage characteristics; Dielectrics; Microelectronics; Read only memory; Silicon; Stress; Tunneling; Ultra large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    0-7803-3243-1
  • Type

    conf

  • DOI
    10.1109/ICMTS.1997.589350
  • Filename
    589350
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1712251