DocumentCode :
1712718
Title :
Thermal modeling and measurement of AlGaN/GaN FETs built on sapphire and SiC substrates
Author :
Park, Jeong ; Kakovitch, Dimitri ; Shin, Moo Whan ; Lee, Chin C.
Author_Institution :
University of Califomia
fYear :
2003
Firstpage :
438
Lastpage :
442
Keywords :
Aluminum gallium nitride; Electrical resistance measurement; FETs; Gallium nitride; HEMTs; MODFETs; Silicon carbide; Substrates; Temperature measurement; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2003. Proceedings. 53rd
ISSN :
0569-5503
Print_ISBN :
0-7803-7791-5
Type :
conf
DOI :
10.1109/ECTC.2003.1216314
Filename :
1216314
Link To Document :
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