• DocumentCode
    1712718
  • Title

    Thermal modeling and measurement of AlGaN/GaN FETs built on sapphire and SiC substrates

  • Author

    Park, Jeong ; Kakovitch, Dimitri ; Shin, Moo Whan ; Lee, Chin C.

  • Author_Institution
    University of Califomia
  • fYear
    2003
  • Firstpage
    438
  • Lastpage
    442
  • Keywords
    Aluminum gallium nitride; Electrical resistance measurement; FETs; Gallium nitride; HEMTs; MODFETs; Silicon carbide; Substrates; Temperature measurement; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 2003. Proceedings. 53rd
  • ISSN
    0569-5503
  • Print_ISBN
    0-7803-7791-5
  • Type

    conf

  • DOI
    10.1109/ECTC.2003.1216314
  • Filename
    1216314
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1712718