Carbon shunting arc and its induced plasma and DLC film deposition

Summary form only given. Plasma Based Ion Implantation (PBII) technology is a promising method for realizing uniform ion implantation into materials with three dimensional topologies. Recently, a conformal implantation has become possible using a combination of a pulsed discharge with a pulsed bias of the materials. Non-gaseous plasmas such as carbon and tungsten with a high melting point are desirable as they can be produced without any external trigger devices. We think that a shunting arc is a promising method for creating a pulsed arc using the above materials without any trigger sources. This report is concerned with the production of DLC using shunting arcs as well as the formation of the shunting arc and its induced gaseous plasma. In addition, the possibility of a hybrid PBII system including gaseous and non-gaseous ions will be discussed.