• DocumentCode
    1712858
  • Title

    Energy recovery for the design of high-speed, low-power static RAMs

  • Author

    Tzartzanis, Nestoras ; Athas, William C.

  • Author_Institution
    Inf. Sci. Inst., Univ. of Southern California, Marina del Rey, CA, USA
  • fYear
    1996
  • Firstpage
    55
  • Lastpage
    60
  • Abstract
    We present a low-power SRAM design based on the theory of energy recovery that reduces the dissipation associated with write operations while operating at high speed. The energy-recovery SRAM was evaluated through SPICE simulations and compared with a standard design. Simulation results of a 256 × 256 memory configuration indicate that, for successive write operations, energy saving for the different SRAM functions vary from 59% to 76% at 200 MHz operating frequency compared to the conventional design.
  • Keywords
    SRAM chips; 200 MHz; 256/spl times/256 memory configuration; CMOS VLSI; SPICE simulations; clock driver circuit; energy dissipation models; energy recovery; energy saving; high-speed low-power SRAM design; power dissipation; write operations; Capacitance; Clocks; Driver circuits; Frequency synchronization; Random access memory; Read-write memory; Resonance; Signal generators; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Power Electronics and Design, 1996., International Symposium on
  • Conference_Location
    Monterey, CA, USA
  • Print_ISBN
    0-7803-3571-6
  • Type

    conf

  • DOI
    10.1109/LPE.1996.542730
  • Filename
    542730