Analytical modeling of proximity and skin effects for millimeter-wave inductors simulation and design in nano Si CMOS

Author

Ren-Jia Chan ; Jyh-Chyurn Guo

Author_Institution

Inst. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

4

Abstract

Analytical models of proximity and skin effects have been developed in this paper to calculate and predict the frequency dependent resistance, Re(Z_in) and quality factor, Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Z_in) and Q measured from mm-wave inductor (L_dc~150pH, Q_max~17, f_SR≫65GHz) fabricated by 65nm CMOS process with 0.9μm standard top metal.

Keywords

CMOS integrated circuits; Q-factor; inductors; integrated circuit modelling; nanotechnology; skin effect; CMOS technology; Si; circuit simulation; frequency dependent resistance; millimeter wave inductors simulation; proximity effect; quality factor; size 65 nm; skin effect; Frequency measurement; Inductors; Integrated circuits; Layout; Magnetic confinement; Q measurement; Thickness measurement; Analytical model; mm-wave inductor; proximity; skin;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848474

Filename

6848474