Title :
Analytical modeling of proximity and skin effects for millimeter-wave inductors simulation and design in nano Si CMOS
Author :
Ren-Jia Chan ; Jyh-Chyurn Guo
Author_Institution :
Inst. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Analytical models of proximity and skin effects have been developed in this paper to calculate and predict the frequency dependent resistance, Re(Zin) and quality factor, Q for mm-wave inductor design. The derived models incorporate layout and material parameters, and frequency in an explicit form suitable for circuit simulation. The accuracy has been proven by a close match with Re(Zin) and Q measured from mm-wave inductor (Ldc~150pH, Qmax~17, fSR≫65GHz) fabricated by 65nm CMOS process with 0.9μm standard top metal.
Keywords :
CMOS integrated circuits; Q-factor; inductors; integrated circuit modelling; nanotechnology; skin effect; CMOS technology; Si; circuit simulation; frequency dependent resistance; millimeter wave inductors simulation; proximity effect; quality factor; size 65 nm; skin effect; Frequency measurement; Inductors; Integrated circuits; Layout; Magnetic confinement; Q measurement; Thickness measurement; Analytical model; mm-wave inductor; proximity; skin;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848474
