GaN-based SAW structures resonating within the 5.4–8.5 GHz frequency range, for high sensitivity temperature sensors

Author

Muller, A. ; Konstantinidis, G. ; Giangu, I. ; Buiculescu, V. ; Dinescu, Adrian ; Stefanescu, A. ; Stavrinidis, A. ; Stavrinidis, G. ; Ziaei, A.

Author_Institution

IMT-Bucharest, Bucharest, Romania

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

4

Abstract

The paper presents the manufacturing of GaN based single SAW resonator temperature sensing structures, having IDTs with fingers/interdigit spacing width within 200-120 nm range. “On wafer” hot plate resonance frequency vs. temperature measurements were performed in the 20-150°C temperature range. Further measurements have been performed in the -268-+150°C temperature range, using a cryostat setup. The sensitivities obtained demonstrate the advantage of GaN SAW resonators as temperature sensors.

Keywords

III-V semiconductors; cryostats; gallium compounds; microwave resonators; surface acoustic wave resonators; surface acoustic wave sensors; temperature measurement; temperature sensors; wide band gap semiconductors; GaN; IDT; cryostat setup; finger-interdigit spacing width; frequency 5.4 GHz to 8.5 GHz; gallium nitride-based single-SAW resonator temperature sensing structures; high-sensitivity temperature sensors; on-wafer hot plate resonance frequency; temperature -268 degC to 150 degC; temperature measurement; Frequency measurement; Gallium nitride; Nanolithography; Piezoelectric transducers; Resonant frequency; Surface acoustic waves; Temperature sensors; SAW resonator; nanolithography; temperature sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848483

Filename

6848483