High power V-band power amplifier

Author

Hamidian, Amin ; Portela, Henrique ; Boeck, Georg

Author_Institution

Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany

fYear

2009

Firstpage

783

Lastpage

786

Abstract

This paper presents a fully integrated V-band two stage power amplifier with cascode topology. The PA is designed on 0.25 Â¿m SiGe:C BiCMOS technology. The technology provides f_t and f_max Â¿ 200 GHz. The two stage PA provides a gain of 17 dB at 64 GHz. The PA has been optimized for biasing circuit, PA Core and the matching networks. This has resulted in high power and high linearity from 58 GHz to 66 GHz. As a result of the optimization the 1 dB gain compression point remains better than 12 dBm in the entire range of the frequency. The PA achieves the maximum P_1dB of 13.8 dBm at around 64 GHz.

Keywords

BiCMOS analogue integrated circuits; CMOS analogue integrated circuits; Ge-Si alloys; MMIC; carbon; network topology; power amplifiers; BiCMOS technology; SiGe:C; cascode topology; frequency 200 GHz; frequency 58 GHz to 66 GHz; gain 1 dB; high power V-band power amplifier; size 0.25 mum; Chromatic dispersion; Finite element methods; High power amplifiers; Magnetic cores; Optical design; Optical fiber dispersion; Optical fibers; Perfectly matched layers; Photonic crystal fibers; Refractive index; 60 GHz; PA; SiGe-HBT technology; wireless communications;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference (IMOC), 2009 SBMO/IEEE MTT-S International

Conference_Location

Belem

ISSN

1679-4389

Print_ISBN

978-1-4244-5356-6

Electronic_ISBN

1679-4389

Type

conf

DOI

10.1109/IMOC.2009.5427474

Filename

5427474