A 34–110 GHz wideband, asymmetric, broadside-coupled Marchand balun in 180 nm SiGe BiCMOS technology

Author

Ickhyun Song ; Schmid, Robert L. ; Howard, Duane C. ; Seungwoo Jung ; Cressler, John D.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

4

Abstract

An asymmetric, broadside-coupled Marchand balun for wideband millimeter wave applications is presented. The balun based on the modified off-center frequency method achieves 34-110 GHz operation bandwidth and exhibits minimum insertion loss of 4.7 dB at 54 GHz. To the author´s best knowledge, this is the widest operational bandwidth among the recently published millimeter wave baluns in silicon technology.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; baluns; SiGe; SiGe BiCMOS technology; asymmetric broadside-coupled Marchand balun; frequency 34 GHz to 110 GHz; loss 4.7 dB; millimeter wave baluns; modified off-center frequency method; silicon technology; wideband millimeter wave applications; BiCMOS integrated circuits; CMOS integrated circuits; Impedance; Impedance matching; Microwave technology; Phase measurement; Silicon germanium; asymmetric Marchand; balun; broadside coupled; millimeter wave integrated circuits; passive circuit;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848496

Filename

6848496