Title :
Fabrication and dielectric properties of SCT thin film by RF sputtering method
Author :
Kim, J.S. ; Cho, C.N. ; Shin, C.G. ; Oh, Y.C. ; Choi, W.S. ; Song, M.J. ; So, B.M. ; Kim, C.H. ; Lee, J.U.
Author_Institution :
Dept. of Electr. Eng., Kwangwoon Univ., Seoul, South Korea
Abstract :
The (Sr0.9Ca0.1)TiO3(SCT) thin films were deposited on Pt-coated electrode (Pt/TiN/SiO2/Si) using RF magnetron sputtering method. The composition of SCT thin film were closed to stoichiometry (1.081 in A/B ratio). The optimum annealing temperature of SCT thin film was 600[°C]. The dielectric constant depending on the annealing temperature was shown to be the great 146 at 600[°C]. The temperature coefficients of capacitance exhibit very stable values below ±4[%] in the temperature range of -80 ∼ 90[°C]. The temperature properties of the dielectric loss have a stable value within 0.02. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz].
Keywords :
annealing; calcium compounds; capacitance; dielectric losses; dielectric materials; dielectric thin films; permittivity; sputter deposition; sputtered coatings; strontium compounds; 600 degC; Pt-TiN-SiO2-Si; Pt-coated electrode; RF magnetron sputtering method; SCT thin film deposition; Sr0.9Ca0.1TiO3; dielectric loss; dielectric properties; fabrication properties; optimum annealing temperature; stoichiometry; temperature properties; Annealing; Dielectric constant; Dielectric losses; Dielectric thin films; Fabrication; Radio frequency; Semiconductor thin films; Sputtering; Strontium; Temperature distribution;
Conference_Titel :
Electrical Insulating Materials, 2005. (ISEIM 2005). Proceedings of 2005 International Symposium on
Print_ISBN :
4-88686-063-X
DOI :
10.1109/ISEIM.2005.193440
