Title :
High-Q MEMS-tunable W-band bandstop resonators
Author :
Naglich, Eric J. ; Sinani, Mihal ; Sungwook Moon ; Peroulis, Dimitrios
Author_Institution :
Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
High quality factor W band MEMS-tunable evanescent-mode bandstop resonators are presented for the first time. The precision, tolerances, and small feature capability of silicon microfabrication techniques enable these resonators to be the highest frequency tunable evanescent-mode cavities shown to date. Their MEMS tuning technology requires very low power to operate, and the entire resonator-tuner structure is made of silicon to enable compatibility with integrated circuit manufacturing processes. A measured tuning range of 75.8 GHz to 82.3 GHz with quality factors of 414 to 448 were observed with a tuning voltage of 70 Volts. Such resonators will be important for tunable W band filters as lower frequencies become saturated and W band applications become more common.
Keywords :
Q-factor; cavity resonator filters; microcavities; microfabrication; micromechanical resonators; millimetre wave filters; millimetre wave resonators; silicon; MEMS tuning technology; Si; W-band bandstop resonators; evanescent-mode bandstop resonators; evanescent-mode cavities; frequency 75.8 GHz to 82.3 GHz; high quality factor; high-Q MEMS-tunable resonators; integrated circuit manufacturing processes; resonator-tuner structure; silicon microfabrication techniques; tunable W band filters; voltage 70 V; Assembly; Cavity resonators; Coplanar waveguides; Micromechanical devices; Passband; Tuners; Cavity resonators; Filters; Resonator filters; Tunable circuits and devices;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848511