Title :
On the influence of polysilicon layer resistance upon the noise performance of microwave BJTs
Author :
Caddemi, A. ; Sannino, M. ; Mazzara, S.
Author_Institution :
Dipt. di Ingegneria Elettrica, Palermo Univ., Italy
Abstract :
Different series of double polysilicon bipolar transistors have been characterized in terms of noise and scattering parameters over the 2-6 GHz frequency range at different collector current values, according to their emitter finger number. Extraction of a circuit model has been accomplished for each series based on an improved T-equivalent circuit including noise sources. By such a model, novel analytical expressions for the noise parameters F0 (minimum noise figure), |Γ 0| (magnitude of the optimum source reflection coefficient) and rn (normalized noise resistance) have been derived for this polysilicon self-aligned structure. Following that, a sensitivity analysis has been performed for evaluating the influence of the device model elements upon the noise parameters with specific concern for the polysilicon layer resistance
Keywords :
S-parameters; electric resistance; equivalent circuits; microwave bipolar transistors; semiconductor device models; semiconductor device noise; sensitivity analysis; silicon; 2 to 6 GHz; Si; T-equivalent circuit; circuit model; collector current values; device model elements; double polysilicon bipolar transistors; emitter finger number; microwave BJT; minimum noise figure; noise parameters; noise performance; normalized noise resistance; optimum source reflection coefficient; polysilicon layer resistance; scattering parameters; sensitivity analysis; Acoustic reflection; Analytical models; Bipolar transistors; Circuit noise; Fingers; Frequency; Noise figure; Performance evaluation; Scattering parameters; Sensitivity analysis;
Conference_Titel :
Microwave and Optoelectronics Conference, 1997. Linking to the Next Century. Proceedings., 1997 SBMO/IEEE MTT-S International
Conference_Location :
Natal
Print_ISBN :
0-7803-4165-1
DOI :
10.1109/SBMOMO.1997.648805
