A new thermal model for HBT RF circuit simulation

Author

Martins, Everson ; Swart, Jacobus W. ; Akpinar, Mertin ; Wolff, Ingo

Author_Institution

UNICAMP, Sao Paulo, Brazil

Volume

2

fYear

1997

Firstpage

526

Abstract

A simple thermal model for heterojunction bipolar transistors was implemented in the HP EEsof LIBRA simulator. The model is based on a proposed circuit that adjusts the Libra´s built-in Gummel-Poon model. Thermal effects are properly simulated, giving a good agreement for DC I-V characteristics, small signal S parameters and for power curves at 1.85 GHz signal. A nonlinear dependency of the thermal effect with RF power is observed on the power curves and is properly modeled

Keywords

UHF circuits; bipolar transistor circuits; circuit analysis computing; digital simulation; heterojunction bipolar transistors; microwave circuits; network parameters; semiconductor device models; 1.85 GHz; DC I-V characteristics; Gummel-Poon model; HBT RF circuit; HP EEsof LIBRA simulator; RF power; circuit simulation; nonlinear dependency; power curves; small signal S parameters; thermal model; Biological materials; Circuit simulation; Conducting materials; Equivalent circuits; Heterojunction bipolar transistors; Jacobian matrices; Radio frequency; Silicon; Temperature dependence; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1997. Linking to the Next Century. Proceedings., 1997 SBMO/IEEE MTT-S International

Conference_Location

Natal

Print_ISBN

0-7803-4165-1

Type

conf

DOI

10.1109/SBMOMO.1997.648806

Filename

648806