DocumentCode
171457
Title
Impact of multi-finger geometry on the extrinsic parasitic resistances of microwave MOSFETs
Author
Zarate-Rincon, Fabian ; Alvarez-Botero, German A. ; Murphy-Arteaga, Roberto S. ; Torres-Torres, R. ; Ortiz-Conde, Adelmo
Author_Institution
Dept. of Electron., Inst. Nac. de Astrofis., Opt. y Electron., Puebla, Mexico
fYear
2014
fDate
1-6 June 2014
Firstpage
1
Lastpage
3
Abstract
Multi-Finger MOSFETs are used to decrease the gate resistance in order to improve microwave-operation figures-of-merit such as the maximum frequency of oscillation. Even though the effect of splitting the gate electrode on the associated resistance has been extensively analyzed, the corresponding influence on the source-drain resistances has not been the subject of much research. We herein present an analysis of the series parasitic resistances of MOSFETs with different number of fingers.
Keywords
MOSFET; microwave transistors; extrinsic parasitic resistance; gate electrode; gate resistance; microwave MOSFET; multifinger MOSFET; multifinger geometry; series parasitic resistance; source-drain resistances; Fingers; Geometry; MOSFET; Radio frequency; Resistance; LDD regions; Microwave MOSFET; extrinsic geometry; series parasitic resistances;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location
Tampa, FL
Type
conf
DOI
10.1109/MWSYM.2014.6848532
Filename
6848532
Link To Document