• DocumentCode
    171458
  • Title

    Efficiency dependence on the load-pull ratio of a Doherty PA

  • Author

    Pedro, Jose C. ; Nunes, Luis C.

  • Author_Institution
    DETI, Univ. de Aveiro, Aveiro, Portugal
  • fYear
    2014
  • fDate
    1-6 June 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper discusses the dependence of the efficiency of the Doherty power amplifier, DHT PA, on its load-pull ratio, i.e., the ratio between the small-signal and the full-power load resistances presented to the intrinsic transistor of the carrier (or main) DHT PA. The study starts by explaining which are the physical mechanisms responsible for the observed drain efficiency dependence on drain resistance, η(Rd), to then derive a physically consistent model to predict this η (Rd) profile. It is theoretically demonstrated that the observed η (Rd) maximum is due to the carrier PA transistor´s knee voltage and soft turn-on that are responsible for the positive and negative η (Rd) profile slopes, respectively. Finally, it is also shown how this model can be used to estimate the optimum load-pull path that should be provided by the DHT dynamic load modulation.
  • Keywords
    electric resistance; field effect transistors; power amplifiers; DHT PA; DHT dynamic load modulation; Doherty power amplifier; carrier PA transistor; drain efficiency dependence; drain resistance; full-power load resistances; intrinsic transistor; knee voltage; load-pull path; load-pull ratio; negative profile slopes; physical mechanisms; positive profile slopes; small-signal load resistances; soft turn-on; Doherty power amplifier; efficiency; load modulation; load-pull contours;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium (IMS), 2014 IEEE MTT-S International
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/MWSYM.2014.6848533
  • Filename
    6848533