Title :
Ultra high repetition rate and very low noise mode locked lasers based on InAs/InP quantum dash active material
Author :
Akrout, A. ; Merghem, K. ; Martinez, A. ; Tourrenc, J.P. ; Lafosse, X. ; Aubin, G. ; Ramdane, A. ; Lelarge, F. ; Le Gouezigou, O. ; Accard, A. ; Duan, G.H.
Author_Institution :
CNRS Lab. of Photonic & Nanostruct., Marcoussis
Abstract :
Optimization of novel InAs/InP quantum dash nanostructures has allowed the realization of mode locked lasers that exhibit unprecedented performance, enabling subpicosecond pulse generation at >300 GHz repetition rates and very low timing jitter.
Keywords :
III-V semiconductors; high-speed optical techniques; indium compounds; laser mode locking; laser noise; nanostructured materials; optimisation; semiconductor lasers; semiconductor quantum dots; InAs-InP; low noise mode locked lasers; optimization; quantum dash nanostructures; semiconductor quantum dash active material; subpicosecond laser pulse generation; ultrahigh technique; Active noise reduction; Indium phosphide; Laser mode locking; Laser noise; Nanostructured materials; Nanostructures; Optical materials; Pulse generation; Quantum dots; Timing jitter;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012411
