High-power X-band GaN switched-filter phase shifter

Author

Ross, Tyler N. ; Cormier, Gabriel ; Hettak, Khelifa ; Wight, Jim S.

Author_Institution

Dept. of Electron., Carleton Univ., Ottawa, ON, Canada

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

4

Abstract

This paper presents a high-power switched-filter GaN phase shifter, designed for X-band and offering good performance from 8-16 GHz. The manufactured 0°/22.5° switched-filter phase shifter has much wider bandwidth than is typically found with this configuration, while maintaining low insertion loss (<; 2 dB), good return loss (> 11.15 dB) and an amplitude imbalance of less than 1.03 dB across X-band. The 1 dB compression point was higher than laboratory equipment was able to measure (> 38 dBm) and the phase shifter MMIC exhibited an IIP3 higher than 46 dBm. The proposed high-power phase shifter has been fabricated in a 0.5 μm GaN HEMT process and was designed using an accurate, customized switch FET model.

Keywords

III-V semiconductors; MMIC phase shifters; gallium compounds; microwave filters; switched filters; wide band gap semiconductors; GaN; HEMT process; accurate customized switch FET model; compression point; frequency 8 GHz to 16 GHz; high-power X-band switched-filter phase shifter; laboratory equipment; phase shifter MMIC; size 0.5 mum; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Phase measurement; Reliability; Switches; GaN; high linearity; high power; phase shifter; switch modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848556

Filename

6848556