Low phase noise and high output power 367 GHz and 154 GHz signal sources in 130 nm SiGe HBT technology

Author

Zeinolabedinzadeh, Saeed ; Song, Peter ; Kaynak, Mehmet ; Kamarei, Mahmoud ; Tillack, Bernd ; Cressler, John D.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Tech, Atlanta, GA, USA

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

4

Abstract

This paper addresses the design and measurement results of two high frequency signal sources implemented in SiGe HBT technology. The 367 GHz signal source achieves a phase noise of -110 dBc/Hz at 10 MHz offset from the carrier and provides better than -8 dBm of output power. The 154 GHz signal source achieves a phase noise of -87 dBc/Hz at 1 MHz offset from the carrier and generates +7 dBm of differential output power. To the author´s knowledge, the 154 GHz oscillator achieves the highest output power among silicon-based signal sources in this frequency range, and the 367 GHz signal source achieves the best phase noise among silicon-based signal sources in this frequency range. These results show the feasibility of implementation of high-performance sub-millimeter-wave circuits in advanced SiGe technology platforms.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; phase noise; submillimetre wave oscillators; SiGe; SiGe HBT technology; advanced SiGe technology platforms; frequency 1 MHz; frequency 10 MHz; frequency 154 GHz; frequency 367 GHz; high frequency signal sources; high-performance sub-millimeter-wave circuits; oscillator; phase noise; silicon-based signal sources; Educational institutions; Heterojunction bipolar transistors; Indium tin oxide; Oscillators; Probes; Silicon germanium; Topology; SiGe; oscillator; output power; phase noise; signal source; sub-millimeter-wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848559

Filename

6848559