DocumentCode :
171516
Title :
Continuous class BJ power amplifier with DGS output matching
Author :
Yang, Fei ; Lees, J. ; Choi, Hyo-Sang ; Yu, Haoyong ; Tasker, P.J.
Author_Institution :
China Acad. of Space Technol., Xi´an, China
fYear :
2014
fDate :
1-6 June 2014
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents the design, implementation, and experimental evaluation of a high efficiency continuous Class BJ mode power amplifier, using a compact defected ground structure (DGS) to provide the necessary output matching and harmonic termination for broadband operation. Detailed consideration has been given to the DGS microstrip line impedance and corresponding equalization network, in order to achieve the required fundamental and harmonic matching. The method is demonstrated through design and realization of an amplifier using a commercially available 10W GaN HEMT transistor that achieves efficiencies above 70% over a 600MHz bandwidth with an output power of at least 40 dBm.
Keywords :
HEMT circuits; III-V semiconductors; UHF power amplifiers; defected ground structures; gallium compounds; microwave power amplifiers; power amplifiers; wide band gap semiconductors; DGS output matching; GaN; HEMT transistor; broadband operation; compact defected ground structure; continuous class BJ power amplifier; harmonic termination; power 10 W; Broadband communication; Gallium nitride; HEMTs; Harmonic analysis; Impedance; Power system harmonics; Silicon; Continuous Class BJ; Defected ground structure; power amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
Type :
conf
DOI :
10.1109/MWSYM.2014.6848562
Filename :
6848562
Link To Document :
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