DocumentCode
1715248
Title
Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate
Author
Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya
Author_Institution
Nat. Inst. of Inf. & Commun. Technol., Koganei
fYear
2009
Firstpage
73
Lastpage
74
Abstract
We fabricated broad-area laser diodes containing highly stacked InAs quantum dots by using the strain-compensation technique. The diodes exhibited laser emission at 1529 nm in the pulsed mode with a large characteristic temperature of 113 K.
Keywords
III-V semiconductors; indium compounds; molecular beam epitaxial growth; quantum dot lasers; semiconductor quantum dots; InAs; InP; InP(311)B substrate; broad-area laser diodes; quantum dot laser fabrication; solid-source molecular beam epitaxy technique; strain-compensation technique; temperature 113 K; wavelength 1529 nm; Capacitive sensors; Indium phosphide; Laser modes; Lattices; Optical pulses; Quantum dot lasers; Semiconductor lasers; Substrates; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location
Newport Beach, CA
ISSN
1092-8669
Print_ISBN
978-1-4244-3432-9
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2009.5012424
Filename
5012424
Link To Document