Title :
Characteristics of highly stacked quantum dot laser fabricated on InP(311)B substrate
Author :
Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Koganei
Abstract :
We fabricated broad-area laser diodes containing highly stacked InAs quantum dots by using the strain-compensation technique. The diodes exhibited laser emission at 1529 nm in the pulsed mode with a large characteristic temperature of 113 K.
Keywords :
III-V semiconductors; indium compounds; molecular beam epitaxial growth; quantum dot lasers; semiconductor quantum dots; InAs; InP; InP(311)B substrate; broad-area laser diodes; quantum dot laser fabrication; solid-source molecular beam epitaxy technique; strain-compensation technique; temperature 113 K; wavelength 1529 nm; Capacitive sensors; Indium phosphide; Laser modes; Lattices; Optical pulses; Quantum dot lasers; Semiconductor lasers; Substrates; Temperature; Threshold current;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012424
