Title :
Energy transfer in patterned InAs quantum dot cluster grown on GaAs nano-pyramid
Author :
Liang, B.L. ; Wong, P.S. ; Tatebayashi, J. ; Huffaker, D.L.
Author_Institution :
Electr. Eng. Dept., Univ. of California at Los Angeles, Los Angeles, CA
Abstract :
We demonstrate controlled nucleation of QD-cluster and QD-pair on patterned GaAs pyramidal buffer. Photoluminescence measurements indicate lateral energy transfer for the QD-cluster but an isolated nature for the QD-pair.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; nanotechnology; photoluminescence; semiconductor growth; semiconductor quantum dots; GaAs; InAs-GaAs; energy transfer; nanopyramidal buffer; patterned quantum dot cluster growth; photoluminescence measurement; Energy exchange; Gallium arsenide; Photoluminescence; Quantum dots; Radiative recombination; Scanning electron microscopy; Shape control; Spontaneous emission; Substrates; Temperature measurement;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012425
