DocumentCode
1715285
Title
Energy transfer in patterned InAs quantum dot cluster grown on GaAs nano-pyramid
Author
Liang, B.L. ; Wong, P.S. ; Tatebayashi, J. ; Huffaker, D.L.
Author_Institution
Electr. Eng. Dept., Univ. of California at Los Angeles, Los Angeles, CA
fYear
2009
Firstpage
75
Lastpage
76
Abstract
We demonstrate controlled nucleation of QD-cluster and QD-pair on patterned GaAs pyramidal buffer. Photoluminescence measurements indicate lateral energy transfer for the QD-cluster but an isolated nature for the QD-pair.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; nanotechnology; photoluminescence; semiconductor growth; semiconductor quantum dots; GaAs; InAs-GaAs; energy transfer; nanopyramidal buffer; patterned quantum dot cluster growth; photoluminescence measurement; Energy exchange; Gallium arsenide; Photoluminescence; Quantum dots; Radiative recombination; Scanning electron microscopy; Shape control; Spontaneous emission; Substrates; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location
Newport Beach, CA
ISSN
1092-8669
Print_ISBN
978-1-4244-3432-9
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2009.5012425
Filename
5012425
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