Title :
Surface states passivation for and regrowth around nanoposts formed for the fabrication of InP-based intersubband quantum box lasers
Author :
Rathi, M.K. ; Tsvid, G.G. ; Shin, J.C. ; Khandekar, A.A. ; Botez, D.D. ; Kuech, T.F.
Author_Institution :
Dept. of Chem. & Biol. Eng., Univ. of Wisconsin-Madison, Madison, WI
Abstract :
Passivation of interfaces corresponding to the nanoposts´ sidewalls in InP-based intersubband quantum-box (IQB) lasers has resulted in interfacial-state densities < 1011/cm2. High-quality regrowths of semi-insulating InP around dry-etched, passivated, 40 nm-diameter nanoposts were realized.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; interface states; nanostructured materials; nanotechnology; passivation; quantum dot lasers; semiconductor quantum dots; surface states; InGaAs-InP; dry-etching; interfacial-state densities; intersubband quantum box lasers; nanoposts; size 40 nm; surface states passivation; Etching; Indium gallium arsenide; Indium phosphide; Nanobioscience; Optical device fabrication; Passivation; Plasma applications; Plasma density; Surface emitting lasers; Surface morphology;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012428
