High-Voltage CMOS/DMOS Interface Dedicated for Ultrasonic Sensing

Author

Chebli, Robert ; Sawan, Mohamad

Author_Institution

Ecole Polytech. de Montreal, Montreal

fYear

2006

Firstpage

71

Lastpage

72

Abstract

This paper concerns the design of integrated high-voltage circuits for ultrasonic sensing interface. It includes a DC-DC converter, a drive amplifier/HV operational amplifier, and a tuneable pulse generator. The drive amplifier is based on floating gate technique used to reduce its power and area. A 0.8 mum CMOS/DMOS process with supply voltage of 5 V/400 V is used. An output voltage of up to 200 Vis obtained from the DC-DC converter. Also, the drive amplifier generates spikes up to 148 V, with rise and fall times of 67 ns and 58 ns respectively. The peak current flowing through the transducer element can be as high as 200 mA.

Keywords

CMOS integrated circuits; ultrasonic imaging; ultrasonic transducers; drive amplifier; floating gate technique; high-voltage CMOS/DMOS interface; integrated high-voltage circuits; ultrasonic sensing interface; CMOS technology; DC-DC power converters; Micromechanical devices; Operational amplifiers; Pulse amplifiers; Pulse generation; Tunable circuits and devices; Ultrasonic imaging; Ultrasonic transducers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Architecture for Machine Perception and Sensing, 2006. CAMP 2006. International Workshop on

Conference_Location

Montreal, Que.

Print_ISBN

978-1-4244-0685-2

Electronic_ISBN

978-1-4244-0686-9

Type

conf

DOI

10.1109/CAMP.2007.4350356

Filename

4350356