Near-field imaging spectroscopy of low density InAs/InP quantum dots

Author

Kubota, R. ; Mizuno, D. ; Saiki, T. ; Dupuy, E. ; Regreny, P. ; Gendry, M.

Author_Institution

Keio Univ., Yokohama

fYear

2009

Firstpage

87

Lastpage

90

Abstract

Low-density InAs quantum dots (QDs) on an InP(001) substrate were grown by solid source molecular beam epitaxy applying both ripening process and double-cap method. Near-field imaging spectroscopy of these diluted QDs were performed at 10 K. We show this technique has ability to reveal the photoluminescence properties of each single QD. Furthermore, formation of three-dimensional nanostructures between QDs can be predicted in the QDs sample from our results.

Keywords

III-V semiconductors; indium compounds; molecular beam epitaxial growth; nanostructured materials; nanotechnology; photoluminescence; semiconductor growth; semiconductor quantum dots; 3D nanostructure formation; InAs-InP; InP; InP(001)-substrate; near-field imaging spectroscopy; photoluminescence property; quantum dots; solid source molecular beam epitaxy growth; temperature 10 K; Indium phosphide; Optical attenuators; Optical fibers; Optical imaging; Optical materials; Optical refraction; Optical variables control; Quantum dots; Spectroscopy; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Conference_Location

Newport Beach, CA

ISSN

1092-8669

Print_ISBN

978-1-4244-3432-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2009.5012429

Filename

5012429