Title :
Near-field imaging spectroscopy of low density InAs/InP quantum dots
Author :
Kubota, R. ; Mizuno, D. ; Saiki, T. ; Dupuy, E. ; Regreny, P. ; Gendry, M.
Author_Institution :
Keio Univ., Yokohama
Abstract :
Low-density InAs quantum dots (QDs) on an InP(001) substrate were grown by solid source molecular beam epitaxy applying both ripening process and double-cap method. Near-field imaging spectroscopy of these diluted QDs were performed at 10 K. We show this technique has ability to reveal the photoluminescence properties of each single QD. Furthermore, formation of three-dimensional nanostructures between QDs can be predicted in the QDs sample from our results.
Keywords :
III-V semiconductors; indium compounds; molecular beam epitaxial growth; nanostructured materials; nanotechnology; photoluminescence; semiconductor growth; semiconductor quantum dots; 3D nanostructure formation; InAs-InP; InP; InP(001)-substrate; near-field imaging spectroscopy; photoluminescence property; quantum dots; solid source molecular beam epitaxy growth; temperature 10 K; Indium phosphide; Optical attenuators; Optical fibers; Optical imaging; Optical materials; Optical refraction; Optical variables control; Quantum dots; Spectroscopy; Stimulated emission;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012429
