A 0.3 THz 4 × 4 cold-FET imaging array in 45 nm CMOS SOI

Author

Uzunkol, Mehmet ; Edwards, Jennifer M. ; Rebeiz, Gabriel M.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of California San Diego, La Jolla, CA, USA

fYear

2014

fDate

1-6 June 2014

Firstpage

1

Lastpage

4

Abstract

This paper presents a high performance THz imaging array using advanced CMOS technology. The single element of the 0.3 THz 4×4 45 nm CMOS imaging array is composed of a high-efficiency differential on-chip antenna meeting all metal-density rules, which is coupled to a differential detector and a low noise CMOS IF amplifier. The array results in an NEP of 100 pW/Hz^1/2, a responsivity of 1.8-2.0 kV/W with a 3-dB bandwidth of 20 GHz. The power consumption is 3.6 mW/pixel. These values are competitive with the best CMOS THz imaging arrays to date.

Keywords

CMOS analogue integrated circuits; field effect transistors; low noise amplifiers; submillimetre wave integrated circuits; CMOS SOI; NEP; THz imaging arrays; bandwidth 20 GHz; cold-FET imaging; difl´erential detector; frequency 0.3 THz; high-efficiency differential on-chip antenna; low noise IF amplifier; metal-density rules; Arrays; CMOS integrated circuits; CMOS technology; Detectors; Frequency measurement; Imaging; Microstrip antennas; 45 nm; CMOS; NEP; direct detector; imaging array; millimeter-wave imaging; responsivity; terahertz;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (IMS), 2014 IEEE MTT-S International

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/MWSYM.2014.6848574

Filename

6848574