Title :
Finite element analysis of SiGe npn HBT
Author :
Krishna, G. H Rama ; Chakrabarti, N.B. ; Banerjee, Swapna
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
Abstract :
A two dimensional general purpose device simulator (BISOF), based on finite element method, has been developed. The various material parameters, such as dielectric constant, energy bandgap, intrinsic carrier concentration, mobilities and life time etc., which vary with position due to the spatial variation of the composition of the have been taken into account. An npn heterojunction bipolar transistor has been analysed and the dependence of the device characteristics on the various Ge mole-fraction material parameters has also been studied using the program
Keywords :
Ge-Si alloys; digital simulation; electronic engineering computing; elemental semiconductors; finite element analysis; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; silicon; 2D general purpose simulator; BISOF; Ge mole-fraction; Si-SiGe; SiGe npn HBT; device characteristics; finite element analysis; heterojunction bipolar transistor; material parameters; n-p-n device; two dimensional device simulator; Charge carrier processes; Composite materials; Dielectric materials; Equations; Finite element methods; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Semiconductor materials; Silicon germanium;
Conference_Titel :
VLSI Design, 1994., Proceedings of the Seventh International Conference on
Conference_Location :
Calcutta
Print_ISBN :
0-8186-4990-9
DOI :
10.1109/ICVD.1994.282711
