Title :
nOHM-a multi-process device synthesis tool for lateral DMOS structures
Author :
Natarajan, Srikanth ; Sahu, Debapriya ; Dasgupta, Sattam
Author_Institution :
Texas Instrum. (India), Bangalore, India
Abstract :
This paper presents a synthesis tool that generates layouts of Lateral Doubly-Diffused MOS (LDMOS) structures from electrical parameters of the device or from the current and thermal requirements of the package. Optionally, it generates layouts from physical parameters like DMOS width, area and floorplan constraints. Multiple layout and metal bus styles are supported. Source and drain sense DMOSs used to sample currents of the parent devices can also be generated and automatically placed inside the DMOS. The generated layouts are correct by construction. The tool has been developed for the Intelligent Power family of integrated circuits from Texas Instruments Inc. In this paper the need, capabilities and impact of the tool are presented along with the techniques used to achieve them
Keywords :
MOS integrated circuits; circuit layout CAD; integrated circuit technology; power integrated circuits; Intelligent Power family; Texas Instruments; electrical parameters; integrated circuits; lateral DMOS structures; lateral doubly-diffused MOS structure; layout generation; metal bus styles; multiprocess device synthesis tool; nOHM; physical parameters; Conductivity measurement; Identity-based encryption; Logic design; Logic devices; Packaging; Power dissipation; Power generation; Thermal conductivity; Thermal resistance; Voltage;
Conference_Titel :
VLSI Design, 1994., Proceedings of the Seventh International Conference on
Conference_Location :
Calcutta
Print_ISBN :
0-8186-4990-9
DOI :
10.1109/ICVD.1994.282712