Title :
A 350 W, 790 to 960 MHz wideband LDMOS doherty amplifier using a modified combining scheme
Author :
Wu, David Yu-Ting ; Annes, Justin ; Bokatius, Mario ; Hart, Phil ; Krvavac, Enver ; Tucker, Geoff
Author_Institution :
Freescale Semicond. Inc., Tempe, AZ, USA
Abstract :
A modified Doherty combining scheme is proposed that eases the impedance matching requirement and enables excellent AM/AM, AM/PM, and wide bandwidth in practical designs. A 350 W, 790 to 960 MHz symmetrical LDMOS Doherty amplifier measured 20 to 21 dB gain as well as peak and back-off efficiencies of 56% to 61% and 48% to 50% respectively across the band. The amplifier achieved excellent linearization results when driven with wideband 20 and 50 MHz WCDMA signals and a 35 MHz GMSK signal.
Keywords :
MOS integrated circuits; wideband amplifiers; GMSK signal; WCDMA signals; efficiency 48 percent to 50 percent; efficiency 56 percent to 61 percent; frequency 20 MHz; frequency 35 MHz; frequency 50 MHz; frequency 790 MHz to 960 MHz; gain 20 dB to 21 dB; modified combining scheme; power 350 W; wideband LDMOS doherty amplifier; Equations; Multiaccess communication; Radio access networks; Radio frequency; Spread spectrum communication; Wideband; broadband amplifiers; high power amplifiers; power MOSFET; radio frequency amplifiers;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848577
