Title :
Properties of high index-contrast wired GaInAsP waveguides with benzocyclobutene on Si substrate
Author :
Enomoto, Haruki ; Inoue, Keita ; Okumura, Tadashi ; Nguyen, Hanh Duc ; Nishiyama, Nobuhiko ; Atsumi, Yuki ; Kondo, Simon ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo
Abstract :
500 times 150 nm2 GaInAsP wired waveguides were fabricated on a Si substrate by adhesive bonding using benzocyclobutene (BCB). The propagation loss of 2.1 dB/mm and 1.5 mum-radius bending loss of less than 1.0 dB/90deg were obtained.
Keywords :
III-V semiconductors; adhesive bonding; gallium compounds; indium compounds; optical fabrication; optical waveguides; organic compounds; silicon; GaInAsP; Si; adhesive bonding; bending loss; benzocyclobutene; high index-contrast wired waveguides; optical interconnections; propagation loss; size 1.5 mum; size 150 nm; size 500 nm; Biomembranes; High speed optical techniques; III-V semiconductor materials; Indium phosphide; Optical devices; Optical feedback; Optical interconnections; Optical refraction; Optical waveguides; Substrates;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012435
