Title :
A W-band 21.1 dBm power amplifier with an 8-way zero-degree combiner in 45 nm SOI CMOS
Author :
Wei Tai ; Ricketts, David S.
Author_Institution :
Qualcomm Technol. Inc., San Diego, CA, USA
Abstract :
This paper presents a W-band power amplifier (PA) in 45 nm SOI CMOS. The PA incorporates an 8-way zero-degree combiner to efficiently combine 8 parallel PA units, each of which is a 2-stage cascode PA. At 80 GHz, the PA achieves a saturated output power (Psat) of 21.1 dBm, 10.1 dB peak gain, 5.2% peak PAE, and 12 GHz 3-dB bandwidth, and it consumes 1 mm2 of die area. The Psat of 21.1 dBm is the highest among reported W-band PAs in CMOS technology.
Keywords :
CMOS integrated circuits; field effect MIMIC; millimetre wave power amplifiers; power combiners; SOI CMOS amplifier; W-band power amplifier; bandwidth 12 GHz; eight way zero degree combiner; frequency 80 GHz; parallel power amplifier; size 45 nm; Art; Artificial intelligence; CMOS integrated circuits; Gain; Impedance; Power amplifiers; W-band; millimeter-wave; power combining;
Conference_Titel :
Microwave Symposium (IMS), 2014 IEEE MTT-S International
Conference_Location :
Tampa, FL
DOI :
10.1109/MWSYM.2014.6848585
