Title :
Photonic crystal band edge diode light emitters
Author :
Long, Christopher M. ; Giannopoulos, Antonios V. ; Choquette, Kent D.
Author_Institution :
Univ. of Illinois, Urbana, IL
Abstract :
We report electrically injected photonic crystal band edge light emitting diodes. The InP-based membrane light emitters utilize a transverse junction that is created using selective ion implantation. Spectral properties showing the influence of the photonic crystal are reported.
Keywords :
III-V semiconductors; arsenic compounds; electroluminescence; gallium compounds; indium compounds; ion implantation; light emitting diodes; membranes; photoluminescence; photonic crystals; InGaAsP; InP-based membrane light emitters; electrical injection; electroluminescence; photoluminescence; photonic crystal band edge diode light emitters; selective ion implantation; spectral properties; Biomembranes; Fabrication; Laser excitation; Light emitting diodes; Optical pumping; Photonic band gap; Photonic crystals; Pump lasers; Semiconductor diodes; Stimulated emission;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012441
