Title :
26 Gbit/s Direct Modulation of AlGaInAs/InP Lasers with Ridge-Waveguide Structure Buried by Benzocyclobutene Polymer
Author :
Yagi, Hideki ; Koyama, Kenji ; Onishi, Yutaka ; Yoshinaga, Hiroyuki ; Ichikawa, Hiroyuki ; Kaida, Noriaki ; Nomaguchi, Toshio ; Hiratsuka, Kenji ; Uesaka, Katsumi
Author_Institution :
Transm. Devices R&D Labs., Sumitomo Electr. Ind., Ltd., Yokohama
Abstract :
26 Gbit/s direct modulation of 1.3degm wavelength AlGaInAs/InP distributed feedback lasers with the ridge-waveguide structure (ridge width of 1.0degm) buried by the benzocyclobutene polymer was achieved. The high electrical bandwidth of more than 20 GHz was acquired with this ridge-waveguide structure. Consequently, a clear eye-opening with extinction ratio of 6 dB was confirmed in the measurement temperature of 25degC.
Keywords :
aluminium compounds; distributed feedback lasers; gallium compounds; indium compounds; optical modulation; optical waveguides; polymers; semiconductor lasers; AlGaInAs-InP; benzocyclobutene polymer; direct modulation; distributed feedback lasers; electrical bandwidth; extinction ratio; ridge-waveguide structure; temperature 25 C; Bandwidth; Distributed feedback devices; Indium phosphide; Laser feedback; Lithography; Optical device fabrication; Optical transmitters; Polymers; Quantum well devices; Semiconductor lasers;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012445
