Title :
Effect of P-doping on temperature and dynamic performances of 1550nm InAs/InP Quantum Dash based lasers
Author :
Lelarge, F. ; Brenot, R. ; Rousseau, B. ; Martin, F. ; Poingt, F. ; LeGouezigou, L. ; Le Gouezigou, O. ; Pommereau, F. ; Accard, A. ; Make, D. ; Chimot, N. ; van-Dijk, F.
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis
Abstract :
The effect of p-doping on both temperature and dynamic performances of 1.55mum Quantum Dashes lasers is investigated in detail. A relaxation frequency up to 13.5GHz and a damping factor as low as 0.22ns are demonstrated. The origin of this drastic improvement of the dynamic properties of Quantum Dashes lasers is discussed.
Keywords :
III-V semiconductors; indium compounds; quantum dash lasers; semiconductor doping; InAs-InP; damping factor; dynamic properties; p-doping effect; quantum dashes lasers; relaxation frequency; wavelength 1550 nm; Bandwidth; Indium phosphide; Laser modes; Optical materials; Quantum dot lasers; Quantum dots; Resonance; Resonant frequency; Temperature; Threshold current;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012448
