Nano-electronics of high κ dielectrics on InGaAs for key technologies beyond Si CMOS

Author

Lin, T.D. ; Chang, P. ; Chiu, H.C. ; Chang, Y.C. ; Lin, C.A. ; Chang, W.H. ; Lee, Y.J. ; Chang, Y.H. ; Huang, M.L. ; Kwo, J. ; Hong, M.

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu

fYear

2009

Firstpage

94

Lastpage

99

Abstract

The surface Fermi level unpinning in InGaAs has been realized with high kappa dielectric growth using molecular beam eitaxy (MBE) and atomic layer deposition (ALD). Furthermore, world-record device performances in self-aligned inversion-channel InGaAs MOSFET and a capacitance equivalent thickness (CET) of les 1 nm in Ga₂O₃(Gd₂O₃) and ALD-HfO₂ on InGaAs have been achieved.

Keywords

CMOS integrated circuits; Fermi level; III-V semiconductors; MOSFET; atomic layer deposition; elemental semiconductors; gadolinium compounds; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; nanoelectronics; silicon; Ga₂O₃; Gd₂O₃; InGaAs; MOSFET; Si; Si CMOS; atomic layer deposition; capacitance equivalent thickness; high k dielectrics; molecular beam eitaxy; nano-electronics; surface Fermi level unpinning; Aluminum oxide; CMOS technology; Capacitance-voltage characteristics; Dielectrics; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; MOSFET circuits; Tin; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on

Conference_Location

Newport Beach, CA

ISSN

1092-8669

Print_ISBN

978-1-4244-3432-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2009.5012451

Filename

5012451