Title :
Source/drain formation by using epitaxial regrowth of N+InP for III–V nMOSFETs
Author :
Takenaka, Mitsuru ; Takeda, Koji ; Hoshii, Takuya ; Tanemura, Takuo ; Sugiyama, Masakazu ; Nakano, Yoshiaki ; Takagi, Shinichi
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo
Abstract :
Defect-free n-type InP source/drain for III-V nMOSFETs was successfully formed by epitaxial regrowth at 610degC. The impurity concentration of 1times1019 cm-3 with the S/D junction steepness of around 10 nm/dec. was obtained.
Keywords :
III-V semiconductors; MOSFET; epitaxial growth; impurities; indium compounds; semiconductor growth; semiconductor junctions; 3-5 nMOSFET; InP; defect-free n-type source-drain formation; epitaxial regrowth; impurity concentration; source-drain junction; temperature 610 C; Electron mobility; Fabrication; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Ion implantation; MOSFETs; Scanning electron microscopy; Sputter etching; Tensile stress;
Conference_Titel :
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
Conference_Location :
Newport Beach, CA
Print_ISBN :
978-1-4244-3432-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2009.5012454
